Fundamental Trade-Off Between the Operating Frequency and Output Power Density in Linear-Mode Modulated SiC Photoconductive Switch
Author:
Affiliation:
1. School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology,Xi'an,People's Republic of China,710071
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381189.pdf?arnumber=10381189
Reference13 articles.
1. Research progresses on Cherenkov and transit-time high-power microwave sources at NUDT
2. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches
3. Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching
4. 40-W/mm Double Field-plated GaN HEMTs
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