A K-Band Power Amplifier Design Based on 130 nm SiGe Technology with Gain Over 22.4 dB Operating Up to 120 $^{\circ}\mathrm{C}$-Reference-Cited by-同舟云学术

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A K-Band Power Amplifier Design Based on 130 nm SiGe Technology with Gain Over 22.4 dB Operating Up to 120 $^{\circ}\mathrm{C}$

Published:2023-11-13 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
language:
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Author:

Gu Weiyan¹,Lu Xuyang¹

Affiliation:

1. UM-SJTU Joint Institute, Shanghai Jiao Tong University,Shanghai,China

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381468.pdf?arnumber=10381468

Reference7 articles.

1. Broadband InGaP/GaAs HBT Power Amplifier Integrated Circuit Using Cascode Structure and Optimized Shunt Inductor

2. Millimeter-Wave Continuous-Mode Power Amplifier for 5G MIMO Applications

3. A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply

4. A 2–24 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance Transformer

5. A 22-37 GHz Broadband Compact Linear Mm-Wave Power Amplifier Supporting 64-/256-/512-QAM Modulations for 5G Communications

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