Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories-Reference-Cited by-同舟云学术

Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories

Published:2022-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)
language:
Short-container-title:

Author:

Kumar Mondol Anik¹,Raquibuzzaman Md¹,Buddhanoy Matchima¹,Wasiolek Maryla²,Hattar Khalid²,Boykin Timothy¹,Ray Biswajit¹

Affiliation:

1. University of Alabama,Electrical and Computer Engineering Department,Huntsville,USA,AL 35899

2. Sandia National Laboratories

Funder

National Science Foundation

U.S. Department of Energy

National Nuclear Security Administration

Publisher

IEEE

Link

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells;Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems;2023-07-09

4. ACE: An Analog Cell Emulator for Dependability Study of NAND Flash Memory;2023 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume (DSN-S);2023-06