Buried PN Junctions Impact on the Performances of an Inductor at RF Frequencies-Reference-Cited by-同舟云学术

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Buried PN Junctions Impact on the Performances of an Inductor at RF Frequencies

Published:2023-01-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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Author:

Fache Thibaud¹,Moulin Maxime¹,Charlet Ismael¹,Chalupa Zdenek¹,Raskin Jean-Pierre²,Allibert Frédéric³,Plantier Christophe¹,Gaillard Fred¹,Hutin Louis¹

Affiliation:

1. Université Grenoble Alpes,CEA – LETI,Grenoble,France

2. Université Catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium

3. SOITEC,Bernin,France

Funder

European Commission

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10046197/10046144/10046229.pdf?arnumber=10046229

Reference7 articles.

1. Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates

2. High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications

3. Silicon-substrate enhancement technique enabling high quality integrated RF passives

4. A physical model for planar spiral inductors on silicon

5. Engineering SOI substrates for RF to mmWave frontends;allibert;Microwave Journal,2020

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1. Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

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