X-Ray Impact on Advanced High Voltage BCD Technology Platform
Author:
Affiliation:
1. STMicroelectronics Smart Power Technology Development Group,Agrate Brianza (MI),Italy,20864
2. STMicroelectronics, Smart Power Technology Qualification,ESD, FE-BE Compatibility Organization,Cornaredo (MI),Italy,20010
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9954459/9954461/09954479.pdf?arnumber=9954479
Reference18 articles.
1. Radiation effects and hardening of MOS technology: devices and circuits
2. Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration
3. Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits
4. TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters
5. Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications
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