Transient thermal analysis of GaN HEMT under TDD-LTE signal operation
Author:
Affiliation:
1. Nagoya Institute of Technology,Aichi,Japan
2. Nagoya University,Aichi,Japan
3. Meisei University,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10439662/10439663/10439737.pdf?arnumber=10439737
Reference10 articles.
1. Design and simulation of front-end broadband RF power amplifier for LTE TDD 2.3 GHz
2. A 2.5–2.7GHz broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band application
3. Power adaptive decomposed vector rotation based digital predistortion for RF power amplifiers in dynamic power transmission
4. Experimental Parameter Extraction Method by Pulse Response Evaluation Applied to Multistage Thermal RC Ladder Circuit in Large-Signal HEMT Model for Analysis of Thermal Memory Effect;Yoshida;IEICE Transactions on Communications,2014
5. Digital predistortion linearizes wireless power amplifiers
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