A Wideband Low-Noise Amplifier Using High-Pass Filter Structure with Diode Linearizer
Author:
Affiliation:
1. Soongsil University,Department of Electronic Engineering,Seoul,Republic of Korea
2. Soongsil University,Department of Intelligent Semiconductors,Seoul,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10439662/10439663/10439820.pdf?arnumber=10439820
Reference7 articles.
1. A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS
2. A K-/Ka-Band Broadband Low-Noise Amplifier Based on the Multiple Resonant Frequency Technique
3. A 22.2-43 GHz Gate-Drain Mutually Induced Feedback Low Noise Amplifier in 28-nm CMOS
4. A CMOS Band-Pass Low Noise Amplifier with Excellent Gain Flatness for mm-Wave 5G Communications
5. A 0.25-μm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer
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