A Low Power Wideband Receiver Front End for C/X Band 5G Applications in 90 nm CMOS Technology
Author:
Affiliation:
1. National Central University, No.300, Jhongda Rd. Jhongli City,Department of Electrical Engineering,Taoyuan County,Taiwan, R.O.C,320
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10439662/10439663/10439857.pdf?arnumber=10439857
Reference8 articles.
1. 9-GHz Wideband CMOS RX and TX Front-Ends for Universal Radio Applications
2. Wideband SAW-Less Receiver Front-End With Harmonic Rejection Mixer in 65-nm CMOS
3. High-Performance Wideband Low-Noise Amplifier Using Enhanced $\pi$-Match Input Network
4. A 1.2-V 5.2-mW 20–30-GHz Wideband Receiver Front-End in 0.18-$\mu{\hbox {m}}$ CMOS
5. A Blocker-Tolerant Current Mode 60-GHz Receiver With 7.5-GHz Bandwidth and 3.8-dB Minimum NF in 65-nm CMOS
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