Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs-Reference-Cited by-同舟云学术

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Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs

Published:2006-10 Issue:10 Volume:53 Page:2517-2524
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jeng E.S.,Pai-Chun Kuo ,Chien-Sheng Hsieh ,Chen-Chia Fan ,Kun-Ming Lin ,Hui-Chun Hsu ,Wu-Ching Chou

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/35982/01705103.pdf?arnumber=1705103

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chip implementation of supervised neural network using single-transistor synapses;Microelectronics Journal;2017-08

2. Non-overlapped implantation (NOI) MOSFET synapse and its implementation on supervised neural network;Neurocomputing;2015-11

3. Comprehensive study of hole injection in non-overlapped implantation n-type MOSFETs;Japanese Journal of Applied Physics;2014-08-19

4. Single-electron injections in fringing-field-induced charge-trapping memories;Microelectronic Engineering;2014-01

5. Characterization of single-sided gate-to-drain non-overlapped implantation nMOSFETs for multi-functional non-volatile memory applications;Solid-State Electronics;2012-02

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