Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance-Reference-Cited by-同舟云学术

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Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Published:2006-04 Issue:4 Volume:53 Page:712-718
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Moselund K.E.,Freiermuth J.E.,Dainesi P.,Ionescu A.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33831/01610900.pdf?arnumber=1610900

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