Restabilizing mechanisms after the onset of thermal instability in bipolar transistors-Reference-Cited by-同舟云学术

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Restabilizing mechanisms after the onset of thermal instability in bipolar transistors

Published:2006-04 Issue:4 Volume:53 Page:643-653
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nenadovic N.,d'Alessandro V.,La Spina L.,Rinaldi N.,Nanver L.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33831/01610891.pdf?arnumber=1610891

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches;Electronics;2023-08-16

2. Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update;Energies;2022-07-28

3. Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology;Electronics;2021-03-23

4. Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit;IEEE Journal of Solid-State Circuits;2020-09

5. Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers;IEEE Transactions on Electron Devices;2018-02

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