Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation-Reference-Cited by-同舟云学术

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Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation

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Container-title:1996 Symposium on VLSI Technology. Digest of Technical Papers
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Author:

Katoh Y.,Fujieda S.,Hayashi Y.,Kunio T.

Publisher

Widerkehr & Associates

Link

http://xplorestaging.ieee.org/ielx5/3767/11001/00507792.pdf?arnumber=507792

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections;Japanese Journal of Applied Physics;2002-11-30

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