Design of S-Band RF Broadband Power Amplifier Based on Chebyshev Low-Pass Filter and Dual-Band Matched Structure
Author:
Affiliation:
1. School of Physics and Information Engineering, Quanzhou Normal University,Quanzhou,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10527436/10527786/10527856.pdf?arnumber=10527856
Reference8 articles.
1. GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
2. High-power GaN MMIC PA Over 40–4000MHz
3. DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER
4. High-power high-efficiency broadband GaN HEMT Doherty amplifiers for base station applications
5. Design Approach for Implementation of Class-J Broadband Power Amplifiers Using Synthesized Band-Pass and Low-Pass Matching Topology
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