Design and Performance Analysis of CMOS NCFET Using PZT Ferroelectric Material
Author:
Affiliation:
1. National Institute of Electronics and Information Technology,Dept. of ED&T,Gorakhpur,UP,India
2. Indira Gandhi Delhi Technical University for Women,Department of Information Technology,Delhi
3. Amity University,Dept. of ECE,Greater Noida,U. P
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10037246/10037222/10037614.pdf?arnumber=10037614
Reference16 articles.
1. Impact of body-biasing for negative capacitance field-effect transistor;kim;Physical Communication,2020
2. A Flexible Vibration Probe Based on PZT Low-Frequency Drive Mode
3. Design of NCFET with Reasonable Variations in Ferroelectric Material Parameters;ali,2021
4. Gate-Induced Drain Leakage in Negative Capacitance FinFETs
5. TCAD analysis of variation in channel doping concentration on 45nm Double-Gate MOSFET parameters;ali;12th IEEE International Conference Electronics Energy Environment Communication Computer Control (E3-C3) INDICON 2015,2016
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