Design and Fabrication of Low-Driving-Voltage Electroabsorption Modulators Operating at 40 Gb/s
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/50/4285866/04285880.pdf?arnumber=4285880
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrafast Electro‐Absorption Switching in Colloidal CdSe/CdS Core/Shell Quantum Dots Driven by Intense THz Pulses;Advanced Optical Materials;2022-03-03
2. Dependence of a direct THz driven Stark effect on the energy band alignment in heterostructure Quantum Dots;Conference on Lasers and Electro-Optics;2022
3. Electro-optic modulation in integrated photonics;Journal of Applied Physics;2021-07-07
4. Analysis and optimization of 1.5-μm InGaAsP/InP MQWs electroabsorption modulator;Optik;2019-04
5. The quantum-confined Stark effect in layered hybrid perovskites mediated by orientational polarizability of confined dipoles;Nature Communications;2018-10-11
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