ReCAM: Resistive RAM Digital Content Addressable Memory Using Novel 3T1R Bitcell-Reference-Cited by-同舟云学术

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ReCAM: Resistive RAM Digital Content Addressable Memory Using Novel 3T1R Bitcell

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Sharma Radheshyam¹,Dhakad Narendra Singh¹,Reddy Govindu Sathvik¹,Sharma Vishal²,Vishvakarma Santosh Kumar¹

Affiliation:

1. Indian Institute of Technology Indore,India

2. Intel Technology,Bangalore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511788.pdf?arnumber=10511788

Reference8 articles.

1. Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories

2. The trend of emerging non-volatile TCAM for parallel search and AI applications

3. RRAM-based TCAMs for pattern search

4. A Novel In-memory Matching Circuit Based on Non-volatile Resistive Memory

5. A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing

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