Design of High Isolation and Compact Gate Driver for 6.5 kV IGBT Module in Medium Voltage Converters
Author:
Affiliation:
1. Chongqing University,State Key Laboratory of Power Transmission Equipment and System Security and New Technology,Chongqing,China
2. CSSC,Laboratory of Low frequency Electromagnetic Communication Technology with the WMCRI,Wuhan,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131279.pdf?arnumber=10131279
Reference8 articles.
1. Gate driver design for 1.7kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection
2. Low Loss Segmented Shielding Technique For PCB-Winding Planar Transformers;ge;IEEE Transactions on Power Electronics,2022
3. High-isolation Low-coupling-capacitance Standalone Gate Drive Power Supply for SiC-based Medium-Voltage Power Electronic Systems
4. Gate Driver Power Supply with Airgapped Transformer for Medium Voltage Converters;teng;2022 IEEE Applied Power Electronics Conference and Exposition (APEC),0
5. Transformer shielding technique for common mode noise reduction in isolated converters
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