GaN HEMT Improves Overall Performance in ZVS Totem Pole PFC Converters-Reference-Cited by-同舟云学术

GaN HEMT Improves Overall Performance in ZVS Totem Pole PFC Converters

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
language:
Short-container-title:

Author:

Torrisi Marco¹,Messina Sebastiano¹,Sfilio Daniele Giovanni¹,Fiore Giuseppina²,Di Stefano Giuseppe²,Cacciato Mario³

Affiliation:

1. STMicroelectronics s.r.l.,SRA Power Conversion Group,Catania,Italy

2. STMicroelectronics s.r.l.,PDG Power Transistors Division,Catania,Italy

3. University of Catania,DIEEI,Catania,Italy

Publisher

IEEE

Link

Reference15 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Performance Of Cold Plate Cooling Of Sic Power Transistor In TO 247 Package;2024 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM);2024-06-19

2. Part 1: New Fast Switching Power Semiconductors in Innovative SMT Packages for 10 kW 3-Phase Vienna Rectifier;2024 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM);2024-06-19

3. A GaN based Totem Pole Bridgeless Power Factor Correction Circuit;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Zero Voltage Switching Modified Boost Converter;WSEAS TRANSACTIONS ON POWER SYSTEMS;2023-10-27