Packaging and Characterization of an Ultra Compact 1200V PCB SiC MOSFET Half-Bridge Module-Reference-Cited by-同舟云学术

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Packaging and Characterization of an Ultra Compact 1200V PCB SiC MOSFET Half-Bridge Module

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
language:
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Author:

Hsu Wei-Jung¹,Tong Junhong¹,Huang Qingyun²,Huang Alex Q.¹

Affiliation:

1. Semiconductor Power Electronics Center (SPEC), The University of Texas at Austin,Austin,Texas,USA

2. University of Missouri,Columbia,Missouri,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131178.pdf?arnumber=10131178

Reference13 articles.

1. Measurement of the Transient Thermal Impedance of MOSFETs Over the Sensitivity of the Threshold Voltage;maximilian;2018 20th European Conference on Power Electronics and Applications (EPE‘18 ECCE Europe),0

2. Driver Integrated Online R_ds-on Monitoring Method for SiC Power Converters

3. Temperature measurements of semiconductor devices - a review

4. FF23MR12W1M1_B11 datasheet;Infineon,2018

5. An Accurate Subcircuit Model of SiC Half-Bridge Module for Switching-Loss Optimization

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module;Microelectronics Reliability;2024-10

2. A PCB-Embedded 1.2 kV SiC MOSFET Package With Reduced Manufacturing Complexity;IEEE Open Journal of Power Electronics;2023

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