A Double-Resistive Feedback Active Inductor based Receiver Frontend in 40 nm CMOS Process for 28-GHz Applications-Reference-Cited by-同舟云学术

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A Double-Resistive Feedback Active Inductor based Receiver Frontend in 40 nm CMOS Process for 28-GHz Applications

Published:2022-11-24 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 19th India Council International Conference (INDICON)
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Author:

Yadav Pritesh Kumar¹,Misra Prasanna Kumar¹

Affiliation:

1. Indian Institute of Information Technology,ECE Department,Allahabad,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10038981/10039721/10039933.pdf?arnumber=10039933

Reference20 articles.

1. High-Frequency Integrated Circuits

2. A 3.3 dB Noise Figure, 60-mW CMOS Receiver Front End for 865-867 MHz Band;pandey;2018 Conference on Information and Communication Technology (CICT),2018

3. A Proposed Technique to Improve the Performance of Receiver by Using Linear Gm-C Low-Pass Filter for mmwave Band Applications

4. Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial

5. A 24 GHz Direct Conversion Receiver for FMCW Ranging Radar Based on Low Flicker Noise Mixer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 21–27 GHz LNA-Mixer in a 180 nm SiGe BiCMOS Process;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

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