There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit-Reference-Cited by-同舟云学术

There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit

Published:2021-02 Issue:2 Volume:42 Page:224-227
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Villani Matteo^ORCID,Clochiatti Simone,Prost Werner,Weimann Nils^ORCID,Oriols Xavier^ORCID

Funder

Spain’s Ministerio de Ciencia, Innovacion y Universidades (MCIU) [Agencia Estatal de Investigacion (AEI)/Fondo Europeo de Dessarollo Regional (FEDER), European Union (EU)]

Generalitat de Catalunya and FEDER for QUANTUMCAT

Deutsche Forschungsgemeinschaft within the Collaborative Research Center SFB/TRR 196MARIE

European Union’s Horizon 2020 Research and Innovation Programme GrapheneCore3

Marie Skłodowska-Curie TeraApps Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9337249/09314193.pdf?arnumber=9314193

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