Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy-Reference-Cited by-同舟云学术

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Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Published:2021-06 Issue:6 Volume:42 Page:828-831
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Stellari Franco^ORCID,Wu Ernest Y.^ORCID,Ando Takashi^ORCID,Cartier Eduard^ORCID,Frank Martin M.^ORCID,Cabral Cyril^ORCID,Song Peilin^ORCID,Pfeiffer Dirk

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9439270/09395488.pdf?arnumber=9395488

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of ReRAM Arrays Operating in the Pre-formed Range to Design Reliable PUFs;Lecture Notes in Networks and Systems;2024

2. Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory;Memories - Materials, Devices, Circuits and Systems;2023-10

3. Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells;Microelectronics Reliability;2023-07

4. Tamper-sensitive pre-formed ReRAM-based PUFs: Methods and experimental validation;Frontiers in Nanotechnology;2022-11-03

5. Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

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