Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors-Reference-Cited by-同舟云学术

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Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors

Published:2021-09 Issue:9 Volume:42 Page:1323-1326
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yoo Hocheon^ORCID,Kim Chang-Hyun^ORCID

Funder

National Research Foundation of Korea

Korean government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9523566/09505598.pdf?arnumber=9505598

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring new logic devices: Unlocking potential with floating-gate transistor;Applied Physics Reviews;2024-08-09

2. Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture;ACS Applied Materials & Interfaces;2024-06-24

3. Drain Current Model for Antiambipolar Organic TFTs at Different Temperatures;IEEE Transactions on Electron Devices;2024-06

4. Organic Ternary Logic Inverter Using Negative Transconductance Pull-Down Switching Transistor;IEEE Electron Device Letters;2024-04

5. Charge transfer mechanism for realization of double negative differential transconductance;npj 2D Materials and Applications;2024-02-29

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