Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP–GaAs Heterojunction Bipolar Transistor-Reference-Cited by-同舟云学术

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Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP–GaAs Heterojunction Bipolar Transistor

Published:2009-09 Issue:9 Volume:30 Page:898-900
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shao-Yen Chiu ,Jung-Hui Tsai ,Hsuan-Wei Huang ,Kun-Chieh Liang ,Tzung-Min Tsai ,Kuo-Yen Hsu ,Wen-Shung Lour

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5224033/05184885.pdf?arnumber=5184885

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction bipolar transistors;International Journal of Hydrogen Energy;2022-11

2. Comparison of Graphene and Zinc Dopant Materials for Organic Polymer Interfacial Layer Between Metal Semiconductor Structure;IEEE Transactions on Electron Devices;2017-12

3. Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes;IEEE Transactions on Electron Devices;2017-03

4. Characteristics of ZnO nanorods-based ammonia gas sensors with a cross-linked configuration;Sensors and Actuators B: Chemical;2015-12

5. Band alignment study of lattice-matched In0.49Ga0.51P and Ge using x-ray photoelectron spectroscopy;Applied Physics Letters;2014-09-08

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