Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric-Reference-Cited by-同舟云学术

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Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Published:2009-05 Issue:5 Volume:30 Page:523-525
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hyun-Sik Choi ,Seung-Ho Hong ,Rock-Hyun Baek ,Kyong-Taek Lee ,Chang-Yong Kang ,Jammy R.,Byoung-Hun Lee ,Sung-Woo Jung ,Yoon-Ha Jeong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4850262/04812040.pdf?arnumber=4812040

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