Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process-Reference-Cited by-同舟云学术

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Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process

Published:2020-03 Issue:3 Volume:41 Page:433-436
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Geum Dae-Myeong,Kim Seong Kwang,Lee Subin^ORCID,Lim Donghwan,Kim Hyung-Jun^ORCID,Choi Chang Hwan^ORCID,Kim Sang-Hyeon^ORCID

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

KAIST

G-CORE

NNFC OI LAB Project

BK21 Plus

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9011768/08962124.pdf?arnumber=8962124

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2. A comprehensive review on dark current in perovskite photodetectors: Origin, drawbacks, and reducing strategies;Sensors and Actuators A: Physical;2024-04

3. 200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2023-10

4. Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs;Electronics;2022-09-22

5. Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector;Journal of Semiconductors;2022-09-01

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