Towards High-Power Multipliers Using Diamond Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Towards High-Power Multipliers Using Diamond Schottky Barrier Diodes

Published:2021-11-01 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)
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Author:

Konstantinou Xenofon¹,Herrera-Rodriguez Cristian J.¹,Lai Junyu²,Hardy Aaron³,Albrecht John D.¹,Seo Jung-Hun²,Muehle Matthias³,Grotjohn Timothy¹,Papapolymerou John¹

Affiliation:

1. Michigan State University,Department of Electrical and Computer Engineering,East Lansing,MI,USA,48824

2. University at Buffalo, the State University of New York,Department of Materials Design and Innovation,Buffalo,NY,USA,14260

3. Fraunhofer USA Inc.,Center for Coatings and Diamond Technologies,East Lansing,MI,USA,48824

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9628186/9628993/09629034.pdf?arnumber=9629034

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 340GHz On-chip Integrated Schottky Diode Frequency Quadrupler;2024 IEEE International Conference on Plasma Science (ICOPS);2024-06-16

2. Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer;Gazi University Journal of Science Part A: Engineering and Innovation;2024-03-28

3. High Breakdown Electric Field Diamond Schottky Barrier Diode With SnO₂ Field Plate;IEEE Transactions on Electron Devices;2022-12

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