A new method for using /sup 252/Cf in SEU testing (SRAM)

Author:

Costantine A.,Howard J.W.,Becker M.,Block R.C.,Smith L.S.,Soli G.A.,Stauber M.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future;IEEE Transactions on Nuclear Science;2003-06

2. Laboratory tests for single-event effects;IEEE Transactions on Nuclear Science;1996-04

3. Advanced qualification techniques [microelectronics];IEEE Transactions on Nuclear Science;1994-06

4. Radiation-hardened microelectronics for space applications;Radiation Physics and Chemistry;1994-01

5. Upset due to a single particle caused propagated transient in a bulk CMOS microprocessor;IEEE Transactions on Nuclear Science;1991-12

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