40nm SONOS Embedded Select in Trench Memory-Reference-Cited by-同舟云学术

40nm SONOS Embedded Select in Trench Memory

Published:2023-09-11 Issue: Volume: Page:
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Container-title:ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
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Author:

Habhab Radouane¹,Della Marca Vincenzo²,Masson Pascal³,Miridi Nadia¹,Pribat Clement⁴,Jeannot Simon⁴,Kempf Thibault¹,Mantelli Marc¹,Lorenzini Philippe³,Voisin Jean-Marc¹,Regnier Arnaud¹,Niel Stephan⁴,La-Rosa Francesco¹

Affiliation:

1. STMicroelectronics,Rousset,France

2. Aix-Marseille University, CNRS, IM2NP UMR,Marseille,France,7334

3. University of Côte d’Azur,Polytech’Lab UPR UCA,Sophia-Antipolis,France,7498

4. STMicroelectronics,Crolles,France

Funder

STMicroelectronics

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10268496/10268469/10268472.pdf?arnumber=10268472

Reference18 articles.

1. Hot Electron Source Side Injection Comprehension in 40nm eSTM™

2. Nature of the Si and N dangling bonds in silicon nitride

3. New Punch-through Assisted Hot Holes Programming Mechanism for Reliable SONOS FLASH Memories with Thick Tunnel Oxide

4. Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors

5. Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures;eitan;J Appl Phys,1999

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