Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
Author:
Affiliation:
1. National University of Singapore (NUS),Singapore
2. Nanyang Technological University (NTU),Singapore
Funder
National Research Foundation
National University of Singapore
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830250.pdf?arnumber=9830250
Reference13 articles.
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