Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 10<sup>11</sup>) and Low Drift Characteristics-Reference-Cited by-同舟云学术

Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 10¹¹) and Low Drift Characteristics

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Lee Jangseop¹,Kim Seonghun¹,Lee Sangmin¹,Ban Sanghyun¹,Heo Seongjae¹,Lee Donghwa¹,Mosendz Oleksandr²,Hwang Hyunsang¹

Affiliation:

1. Pohang University of Science and Technology (POSTECH),Dept. of Mat. Sci. and Eng.,Pohang,Republic of Korea

2. Western Digital Corporation,Western Digital Research Center,San Jose,California,USA,95119

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830179.pdf?arnumber=9830179

Reference10 articles.

1. Understanding the microwave annealing of silicon

2. IMW;laudato,2020

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