GaN FET Versus MOSFET Dead Time Losses Comparison in Half-Bridge Configuration
Author:
Affiliation:
1. Politecnico di Torino,Dipartimento Energia “G. Ferraris” (DENERG),Torino,Italy
2. Efficient Power Conversion EPC Italy s.r.l,Turin,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10609025/10608821/10609235.pdf?arnumber=10609235
Reference18 articles.
1. GaN-based power devices: Physics, reliability, and perspectives
2. Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
3. Power semiconductor device figure of merit for high-frequency applications
4. GN Devices for Motor Drive Applications
5. Dead-Time Compensation for Permanent Magnet Synchronous Motor Drives
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