Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC-Reference-Cited by-同舟云学术

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Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

Published:2001 Issue:12 Volume:48 Page:2665-2670
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tucker J.B.,Rao M.V.,Papanicolaou N.A.,Mittereder J.,Elasser A.,Clock A.W.,Ghezzo M.,Holland O.W.,Jones K.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21013/00974687.pdf?arnumber=974687

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications;IEEE Journal of the Electron Devices Society;2018

2. Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion;IEEE Transactions on Electron Devices;2007-06

3. Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si;Journal of Applied Physics;2004-11-15

4. Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes;Journal of Applied Physics;2004-01

5. Electrical Characterization of Ion-Implanted n⁺/p 6H-SiC Diodes;Materials Science Forum;2003-09

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