The New Structure and Analytical Model of a High-Voltage Interconnection Shielding Structure With High-k Dielectric Pillar-Reference-Cited by-同舟云学术

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The New Structure and Analytical Model of a High-Voltage Interconnection Shielding Structure With High-k Dielectric Pillar

Published:2020-04 Issue:4 Volume:67 Page:1745-1750
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Du Ling^ORCID,Guo Yufeng^ORCID,Zhang Jun^ORCID,Yao Jiafei^ORCID,Yang Kemeng^ORCID,Li Man

Funder

National Natural Science Foundation of China

Natural Science Foundation of Colleges in Jiangsu Province

National Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9046113/09027125.pdf?arnumber=9027125

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications;Microelectronics Journal;2022-12

2. A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness;IEEE Transactions on Electron Devices;2022-12

3. 3-D analytical model of the high-voltage interconnection effect for SOI LDMOS;Superlattices and Microstructures;2021-12

4. Novel Vertical Power MOSFET With Step Hk Insulator Close to Super Junction Limit Relationship Between Breakdown Voltage and Specific ON-Resistance by Improving Electric Field Modulation;IEEE Transactions on Electron Devices;2021-10

5. Analytical Study on a 700 V Triple RESURF LDMOS With a Variable High-K Dielectric Trench;IEEE Transactions on Electron Devices;2021-06

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