A Sub-1 ppm/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process-Reference-Cited by-同舟云学术

A Sub-1 ppm/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process

Published:2022-04 Issue:4 Volume:69 Page:1408-1416
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Huang Shalin¹^ORCID,Li Mingdong¹^ORCID,Li Huan¹,Yin Peng¹^ORCID,Shu Zhou¹^ORCID,Bermak Amine²^ORCID,Tang Fang¹^ORCID

Affiliation:

1. Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China

2. College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar

Funder

Natural Science Foundation of Chongqing, China

Research Foundation of Chongqing Science and Technology Bureau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/9745276/09675291.pdf?arnumber=9675291

Reference35 articles.

1. A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers

2. A Single-Trim Switched Capacitor CMOS Bandgap Reference With a 3σ Inaccuracy of +0.02%, −0.12% for Battery-Monitoring Applications

3. A 0.5-V Supply, 36 nW Bandgap Reference With 42 ppm/°C Average Temperature Coefficient Within −40 °C to 120 °C

4. A 1-V Bandgap Reference in 7-nm FinFET With a Programmable Temperature Coefficient and Inaccuracy of ±0.2% From −45°C to 125°C

5. A 220 nA bandgap reference with 80 dB PSRR targeting energy harvesting;far;Proc IEEE Can Conf Electr Comput Eng (CCECE),2016

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