Physics-based Numerical Modeling for SiCMOSFET Devices
Author:
Affiliation:
1. Southeast University,College of Electrical Engineering,Nanjing,China
2. Anhui electric power research institute State Grid Anhui Electric Power Co.,Hefei,China
3. NARI Technology Co., Ltd,NR Electric Co., Ltd,Nanjing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9735429/9735430/09735575.pdf?arnumber=9735575
Reference15 articles.
1. Study of Silicon Carbide Power MOSFETs Behaviour in OUT-of-SOA Conditions;romano;University of Naples Federico II,2016
2. Transient robustness testing of silicon carbide (SiC) power MOSFETs
3. Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications
4. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
5. Short circuit capability and high temperature channel mobility of SiC MOSFETs
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1. Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed;Micromachines;2024-02-08
2. Automated Flexible Modeling for Various Full-SiC Power Modules;IEEE Transactions on Power Electronics;2023-05
3. A novel SiC superjunction MOSFET with three-level buffer and unipolar channel diode;Micro and Nanostructures;2022-12
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