Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs-Reference-Cited by-同舟云学术

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Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs

Published:2003-12 Issue:12 Volume:24 Page:751-754
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Simoen E.,Mercha A.,Rafi J.M.,Claeys C.,Lukyanchikova N.B.,Garbar N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/28069/01254607.pdf?arnumber=1254607

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures;Microelectronics Journal;2024-02

2. Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs;Solid-State Electronics;2015-03

3. Physics of fluctuation processes in downscaled silicon MOSFETs;Radiophysics and Quantum Electronics;2009-09

4. Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs;Solid-State Electronics;2007-09

5. Low-frequency noise in silicon-on-insulator devices and technologies;Solid-State Electronics;2007-01

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