Fabrication of InGaP/Al/sub 0.98/Ga/sub 0.02/As/GaAs oxide-confined collector-up heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Fabrication of InGaP/Al/sub 0.98/Ga/sub 0.02/As/GaAs oxide-confined collector-up heterojunction bipolar transistors

Published:2003-10 Issue:10 Volume:24 Page:619-621
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen W.B.,Su Y.K.,Lin C.L.,Wang H.C.,Chen S.M.,Su J.Y.,Wu M.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27654/01233933.pdf?arnumber=1233933

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Influence of annealing temperature and environment on the properties of indium tin oxide thin films;Journal of Physics D: Applied Physics;2005-06-03

4. A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential;International Journal of Electronics;2005-05

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