Design and Demonstration of Novel QW Intermixing Scheme for the Integration of UTC-Type Photodiodes With QW-Based Components

Author:

Raring J.W.,Skogen E.J.,Wang C.S.,Barton J.S.,Morrison G.B.,Demiguel S.,DenBaars S.P.,Coldren L.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High Speed Waveguide Uni-Traveling Carrier InGaAs/InP Photodiodes Fabricated By Zn Diffusion Doping;IEEE Journal of Selected Topics in Quantum Electronics;2022-03

2. InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier;Japanese Journal of Applied Physics;2022-01-01

3. Low dark current and high bandwidth waveguide photodetector by selective area growth technique for photonic integration;Twelfth International Conference on Information Optics and Photonics;2021-11-01

4. Effects of polyimide layer under electrical contact pads on the response bandwidth of UTC-PD;Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI;2018-02-23

5. Evanescently Coupled Waveguide InGaAs UTC-PD Having an Over 21 GHz Bandwidth Under Zero Bias;IEEE Photonics Technology Letters;2017-07-15

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