Features of Diffusion Doping and Boron Gettering of Silicon p-i-n Photodiodes-Reference-Cited by-同舟云学术

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Features of Diffusion Doping and Boron Gettering of Silicon p-i-n Photodiodes

Published:2022-10-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek)
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Author:

Kukurudziak M.S.¹,Maistruk E.V.²

Affiliation:

1. Engineering production complex 1, Rhythm Optoelectronics Shareholding Company,Chernivtsi,Ukraine

2. Institute of physical, technical and computer sciences Yu. Fedkovych Chernivtsi National University,Chernivtsi,Ukraine

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9916279/9916318/09916420.pdf?arnumber=9916420

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes;East European Journal of Physics;2024-03-05

2. The influence of the structure of guard rings on the dark currents of silicon p-i-n photodiodes;Physics and Chemistry of Solid State;2023-11-18

3. Study of the Morphology of Macroporous Silicon Obtained by Metal-Assisted Etching Using Chromium;2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT);2023-09-26

4. Degradation of Silicon Resistivity During Thermal Operations in p-i-n Photodiodes Technology;2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT);2023-09-26

5. High-responsivity silicon p–i–n mesa-photodiode;Semiconductor Science and Technology;2023-07-05

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