Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization-Reference-Cited by-同舟云学术

Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization

Published:2022-05 Issue:5 Volume:23 Page:67-83
ISSN:1527-3342
Container-title:IEEE Microwave Magazine
language:
Short-container-title:IEEE Microwave

Author:

Maggi Mattia¹,Hidri Syrine²,Marnat Loic²,Ettorre Mauro¹,Orozco Gerardo³,Margalef-Rovira Marc⁴,Gaquiere Christophe⁵,Haddadi Kamel⁴

Affiliation:

1. Univ. Rennes, CNRS, IETR (Institut d’Electronique et des Technologies du numéRique), UMR 6164, Rennes, France

2. CEA-Leti, Université de Grenoble-Alpes, Grenoble, France

3. National Instruments, Scottsdale, Arizona, USA

4. Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, UMR 8520–IEMN-Institut d’Électronique de Microélectronique et de Nanotechnologie, Lille, France

5. MC2 Technologies, Villeneuve d’Ascq, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/6668/9748895/09748962.pdf?arnumber=9748962

Reference103 articles.

1. A Millimeter-Wave Fully Integrated Passive Reflection-Type Phase Shifter With Transformer-Based Multi-Resonance Loads for 360° Phase Shifting

2. A 28-GHz Low-Power Phased-Array Receiver Front-End With 360° RTPS Phase Shift Range

3. 75–110-GHz $W$ -band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS

4. A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs

5. Four‐bit W‐band switched line phase shifter in 90 nm SiGe

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