Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5422523/5429769/05429780.pdf?arnumber=5429780
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High Contact Resistivity Enabling Low‐Energy Operation in Cr 2 Ge 2 Te 6 ‐Based Phase‐Change Random Access Memory;physica status solidi (RRL) – Rapid Research Letters;2020-10-02
2. Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization;ACS Applied Materials & Interfaces;2018-01-10
3. Nanoscale phase change memory with graphene ribbon electrodes;Applied Physics Letters;2015-09-21
4. Contact resistance measurement of Ge2Sb2Te5phase change material to TiN electrode by spacer etched nanowire;Semiconductor Science and Technology;2014-07-23
5. A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage;Applied Physics A;2012-10-16
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