Analytical MOSFET model for quarter micron technologies-Reference-Cited by-同舟云学术

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Analytical MOSFET model for quarter micron technologies

Published:1994-05 Issue:5 Volume:13 Page:610-615
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Miura-Mattausch M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx1/43/6859/00277634.pdf?arnumber=277634

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Compact Models for Integrated Circuit Design;2015-08-14

2. Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions;Solid-State Electronics;2009-01

3. PSP: An advanced surface-potential-based MOSFET model;TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN;2006

4. Evaluation of Surface-Potential-Based Bulk-Charge Compact MOS Transistor Model;IEEE Transactions on Electron Devices;2005-08

5. A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential;IEICE Transactions on Electronics;2005-05-01

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