High-Performance in-memory Logic Scheme using Unipolar Switching SOT-MRAM
Author:
Affiliation:
1. College of Electronic and Engineering/College of Integrated Circuit, Nanjing University of Aeronautics and Astronautics,Nanjing,China
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928764.pdf?arnumber=9928764
Reference12 articles.
1. Evaluation of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin–Orbit Torque
2. Coherent Subnanosecond Switching of Perpendicular Magnetization by the Fieldlike Spin-Orbit Torque without an External Magnetic Field
3. Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory
4. Spin Analog-to-Digital Convertor Using Magnetic Tunnel Junction and Spin Hall Effect
5. Accelerated Addition in Resistive RAM Array Using Parallel-Friendly Majority Gates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Potential Enabler for High-Performance In-Memory Multi-Bit Arithmetic Schemes With Unipolar Switching SOT-MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07
2. Toward Spintronics Non-volatile Computing-in-Memory Architecture;Design and Applications of Emerging Computer Systems;2023-08-17
3. XOR-CiM: An Efficient Computing-in-SOT-MRAM Design for Binary Neural Network Acceleration;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05
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