An analysis of positive and negative resistance characteristics in the high-current-density region of Schottky diodes-Reference-Cited by-同舟云学术

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An analysis of positive and negative resistance characteristics in the high-current-density region of Schottky diodes

Published:1990-05 Issue:5 Volume:37 Page:1364-1372
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yamamoto Y.,Miyanaga H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/3285/00108199.pdf?arnumber=108199

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Negative Resistance Characteristics of Silicon-based Trench MOS Barrier Schottky Diodes;Journal of Physics: Conference Series;2020-11-01

2. Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface;Semiconductor Science and Technology;2012-04-03

3. Appearance of S-shaped sections on the current-voltage characteristics of p-n junction diodes exposed to microwave radiation;Technical Physics Letters;1999-01

4. Observation of Coulomb staircase and negative differential resistance at room temperature by scanning tunneling microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01

5. Carrier generation and the switching phenomenon: further theoretical description;Journal of Physics: Condensed Matter;1995-12-11

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