A Low Phase Noise 30 GHz Oscillator Topology for Resonant-Fin-Transistors Based High-Q On-chip Resonators in 14 nm Technology
Author:
Affiliation:
1. Center for VLSI and Embedded Systems Technology (CVEST), IIIT Hyderabad,India
2. Purdue University,Department of Electrical and Computer Engineering,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9885796/9885734/09885902.pdf?arnumber=9885902
Reference13 articles.
1. 26.2 A 0.08mm2 25.5-to-29.9GHz Multi-Resonant-RLCM-Tank VCO Using a Single-Turn Multi-Tap Inductor and CM-Only Capacitors Achieving 191.6dBc/Hz FoM and 130kHz 1/f3 PN Corner
2. 26.3 A 25-to-38GHz, 195dB FoMT LC QVCO in 65nm LP CMOS Using a 4-Port Dual-Mode Resonator for 5G Radios
3. A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoMT in 28nm CMOS
4. A quad-core 15GHz BiCMOS VCO with −124dBc/Hz phase noise at 1MHz offset, −189dBc/Hz FOM, and robust to multimode concurrent oscillations
5. Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators With On-Chip MEMS Resonator
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