Sputter-Deposited β-Ga₂O₃ Films With Al Top Electrodes for Resistive Random Access Memory Technology*
Author:
Affiliation:
1. University of Bremen, Otto-Hahn-Allee 1, PO Box 330 440,Institute of Solid State Physics,Bremen,Germany,28359
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10343386/10343419/10343972.pdf?arnumber=10343972
Reference9 articles.
1. Metal oxide resistive switching memory: Materials, properties and switching mechanisms
2. Review of gallium-oxide-based solar-blind ultraviolet photodetectors
3. Toward gallium oxide power electronics
4. Gallium oxide thin films: A new material for high-temperature oxygen sensors
5. Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
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