Highly Efficient Atomistic Simulations of Laterally Inhomogeneous Devices Using the Non-equilibrium Green’s Function Method*
Author:
Affiliation:
1. Korea Advanced Institute of Science and Technology, 291 Daehak-ro,School of Engineering,Daejeon,Republic of Korea,34141
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344172.pdf?arnumber=10344172
Reference7 articles.
1. Density functional theory based simulations of silicon nanowire field effect transistors
2. Hetero-structure mode space method for efficient device simulations
3. Efficient atomistic simulations of lateral heterostructure devices with metal contacts
4. Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green’s function: heterostructure mode space method and core charge approximation
5. Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method
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