From Si to MoS<sub>2</sub> – Device Simulation Based on the Direct Solution of the Boltzmann Transport Equation-Reference-Cited by-同舟云学术

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From Si to MoS₂ – Device Simulation Based on the Direct Solution of the Boltzmann Transport Equation

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Stanojević Z.¹,Tsai C.-M.¹,Gonzalez Medina J. M.¹,Hung L.-C.¹,Karner M.¹

Affiliation:

1. Global TCAD Solutions GmbH,Bösendorferstraße 1/12,Vienna,Austria,1010

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344211.pdf?arnumber=10344211

Reference11 articles.

1. Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO

2. First demonstration of gaa monolayer-mos 2 nanosheet nfet with 410uA/um id 1V vd at 40nm gate length;Chung;IEDM,2022

3. Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD

4. Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

5. Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach

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