Electric Transport Properties In Few-Layers WTe<sub>2</sub> Field Effect Transistors Affected by Temperature-Reference-Cited by-同舟云学术

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Electric Transport Properties In Few-Layers WTe₂ Field Effect Transistors Affected by Temperature

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Faella E.¹,Viscardi L.¹,Intonti K.¹,Durante O.¹,Pelella A.²,Alghamdi M. Safar³,Alshehri M. Ali³,Lamberti P.⁴,Ogrin F.³,Craciun M. F.³,Russo S.³,Bartolomeo A. Di¹

Affiliation:

1. University of Salerno, and CNR-SPIN,Physics Department “E.R. Caianiello”,Fisciano,Italy,84084

2. University of Sannio,Benevento,Italy,82100

3. University of Exeter, Stocker road 6, Exeter EX4 4QL,Devon,UK

4. University of Salerno,Department of Information Engineering and Electrical Engineering and Applied Mathematics,Fisciano,Italy,84084

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10343616.pdf?arnumber=10343616

Reference24 articles.

1. Emerging 2D Materials and Their Van Der Waals Heterostructures

2. Perfect charge compensation in WTe 2 for the extraordinary magnetoresistance: From bulk to monolayer

3. Single-layer MoS2 transistors

4. 2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

5. Optoelectronic memory in 2D MoS2 field effect transistor

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